Resin composition, resin film, semiconductor laminate, method for manufacturing semiconductor laminate, and method for manufacturing semiconductor device

ABSTRACT

The present invention is a resin composition including: (A) an epoxy resin; (B) an epoxy compound shown by the following formula (1) and/or formula (2); (C) a phenolic curing agent; and (D) a curing accelerator, 
     
       
         
         
             
             
         
       
     
     wherein “A” represents a single bond or a divalent organic group selected from the following formulae. 
     
       
         
         
             
             
         
       
     
     This provides a resin composition with improved strength and excellent adhesion and flexibility, a resin film with improved strength formed from the composition, a semiconductor laminate containing the cured material of the resin film and a method for manufacturing the same, as well as a semiconductor device into which the semiconductor laminate is diced and a method for manufacturing the same.

TECHNICAL FIELD

The present invention relates to a resin composition, a resin film, asemiconductor laminate, a method for manufacturing a semiconductorlaminate, and a method for manufacturing a semiconductor device.

BACKGROUND ART

To cope with miniaturization and cost reduction of mobile computingdevices such as smart phones, thinning of silicon wafers to be chipsubstrates and shifting to larger plastic substrates for improvingproduction efficiency have been investigated recently in thesemiconductor industry. In thinner substrates and flexible plasticsubstrates, however, influence of warpage becomes serious, andaccordingly, the strength of encapsulant is important so as not to causecrack in the encapsulant. To improve the strength of encapsulant,various investigations have been carried out using a curing agentincluding a phenol compound such as bisphenol A and biphenyl or a phenolresin such as a novolak resin and a cresol novolak resin (PatentLiterature 1), but encapsulant with more increased strength has beendesired. Being flexible, the substrate is liable to bend. In suchbending, the end of chip and the lower part of chip are subjected tolarge stress, and are liable to cause peeling between the encapsulantand the chip or the encapsulant and the substrate. Accordingly, therehas been arising necessity to improve adhesion of encapsulant itself.

In view of heat resistance, epoxy resins having a fluorine skeleton havecome to be used. With a resin having the fluorine skeleton only,however, flexibility of the resin decreases in curing. Accordingly,there has been a problem of crack caused by heating in the case that awafer is molded (Patent Literature 2).

In addition, when a square plastic substrate is encapsulated, liquidtype encapsulant is liable to cause unevenness about the inside andoutside of the substrate. To encapsulate this substrate easily anduniformly, film type encapsulant has been desired.

Accordingly, it has been desired to develop a highly adhesive resincomposition with improved strength without causing peeling even inwarping, a wafer mold material with excellent property for protecting awafer using the same, and a film formed from the material, so as not tocause crack in bending.

CITATION LIST Patent Literature PATENT LITERATURE 1: Japanese PatentLaid-Open Publication No. 2012-158730 PATENT LITERATURE 2: JapanesePatent No. 4873223 SUMMARY OF THE INVENTION Technical Problem

The present invention was accomplished in view of the above problems. Itis an object of the present invention to provide a resin compositionwith improved strength as well as excellent adhesion and flexibility, aresin film with improved strength formed from the composition, asemiconductor laminate containing the cured material of the resin filmand a method for manufacturing the same, as well as a semiconductordevice into which the semiconductor laminate is diced and a method formanufacturing the same.

Solution to Problem

To accomplish the object, the present invention provides a resincomposition comprising:

(A) an epoxy resin;

(B) an epoxy compound shown by the following formula (1) and/or formula(2);

(C) a phenolic curing agent; and

(D) a curing accelerator,

wherein “A” represents a single bond or a divalent organic groupselected from the following formulae.

The composition like this gives a cured material with improved strengthand excellent adhesion and flexibility.

It is preferable that the component (A) be a silicone-modified epoxyresin.

As the component (A), a silicone-modified epoxy resin can be exemplifiedas described above.

In this case, it is preferable that silicone-modified epoxy resin beshown by the following formula (3) and have a weight-average molecularweight of 3,000 to 500,000,

wherein, R¹ to R⁶ each independently represent a monovalent hydrocarbongroup or an alkoxy group having 1 to 20 carbon atoms, which is the sameor different; “a”, “b”, “c”, “d”, and “e” represent a composition ratioof each repeating unit, and are positive numbers satisfying 0<a<1,0≤b<1, 0≤c<1, 0<d<1, 0≤e<1, 0.67≤(b+d)/(a+c+e)≤1.67, and a+b+c+d+e=1;“g” is an integer of 0 to 300; X represents a divalent organic groupshown by the following formula (4); Y represents a divalent groupcontaining a siloxane skeleton shown by the following formula (5); Zrepresents a divalent organic group shown by the following formula (6),

wherein E represents a single bond or a divalent organic group selectedfrom the following formulae,

R⁷ and R⁸ each represent a monovalent hydrocarbon group or an alkoxygroup having 1 to 20 carbon atoms, which is the same or different, “t”and “u” are each independently an integer of 0 to 2;

wherein “v” is an integer of 0 to 300;

wherein G represents a single bond or a divalent organic group selectedfrom the following formulae,

R⁹ and R¹⁰ each represent a monovalent hydrocarbon group or an alkoxygroup having 1 to 20 carbon atoms, which is the same or different, “w”and “x” are each independently an integer of 0 to 2.

The composition like this is capable of giving a cured material withreally excellent chemical resistance, heat resistance, and pressureresistance.

It is preferable that the resin composition exhibit a tensile strengthof 6.0 MPa or more after being cured.

The composition like this gives favorable crack resistance.

The component (B) is preferably contained in an amount of 0.5 to 100parts by mass based on 100 parts by mass of the component (A).

The composition like this is preferable since it sufficiently improvesthe strength and the adhesion without largely affecting the chemicalresistance, modulus of elasticity, and coefficient of linear expansion.

It is preferable that the composition further comprise (E) an inorganicfiller.

The composition like this is really excellent in wafer protectionproperties as well as heat resistance, humidity resistance, andstrength.

In this case, it is preferable that the inorganic filler be silica andbe contained in an amount of 20 to 96 mass % in the resin composition.

The composition like this is preferable since it gives favorableprocessing characteristics and improved strength.

The present invention further provides a resin film composed of theresin composition of the present invention described above.

The resin film like this acts as a wafer mold material in which variouserrors are avoidable due to the improved strength and adhesion.

It is preferable that the resin film exhibit a tensile strength of 6.0MPa or more after being cured.

The resin film like this exhibits favorable crack resistance.

The present invention further provides a semiconductor laminatecomprising a cured material of the inventive resin film described aboveon a semiconductor wafer.

In the semiconductor laminate like this, the resin film has improvedstrength and adhesion, and the semiconductor wafer is protectedsufficiently by the resin film thereby.

The present invention further provides a semiconductor device,characterized in that the inventive semiconductor laminate describedabove is diced into each piece.

The semiconductor device like this has high quality.

The present invention further provides a method for manufacturing asemiconductor laminate, comprising the steps of:

bonding the inventive resin film described above on a semiconductorwafer to mold the semiconductor wafer; and

heat curing of the resin film.

The method for manufacturing a semiconductor laminate like this makes itpossible to manufacture a semiconductor laminate in which thesemiconductor wafer is protected sufficiently by the resin film.

The present invention further provides a method for manufacturing asemiconductor device, comprising the step of dicing the semiconductorlaminate manufactured by the inventive method for manufacturing asemiconductor laminate described above into each piece.

The method for manufacturing a semiconductor device like this makes itpossible to manufacture a high quality semiconductor device.

Advantageous Effects of Invention

The inventive resin compositions contains the epoxy compound (B) in aparticular structure, which enables the cured material to have largelyimproved strength, together with improved adhesion. These effects makeit possible to manufacture a flexible film with improved adhesion,thereby allowing the film to have favorable molding properties to alarge diameter wafer and a thin film wafer. The resin film is excellentin close adhesiveness, adhesion properties, and wafer protectionproperties, and is capable of molding a wafer collectively, therebybeing usable for wafer level packaging favorably. Use of each inventionmakes it possible to provide a high quality semiconductor devices inhigh yield.

DESCRIPTION OF EMBODIMENTS

Hereinafter, the present invention will be described more specifically.

As described above, it has been desired to develop a resin compositionwith improved strength and excellent adhesion and flexibility, a resinfilm with improved strength formed from the composition, a semiconductorlaminate containing the cured material of the resin film and a methodfor manufacturing the same, as well as a semiconductor device into whichthe semiconductor laminate is diced and a method for manufacturing thesame.

The present inventors have diligently investigated to solve the aboveproblems. As a result, the present inventors have found that thecombination of (A) an epoxy resin, (B) an epoxy compound in a particularstructure, (C) a phenolic curing agent, and (D) a curing acceleratorbrings a resin composition that gives a cured material with largetensile strength. The present inventors have additionally found that theresin composition also has favorable adhesion, and the film formed fromthis resin composition acts as a wafer mold material that can be handledmore easily; thereby bringing the present invention to completion.

Hereinafter, the embodiments of the present invention will be describedspecifically, but the present invention is not limited thereto.

[Resin Composition]

The inventive resin composition contains (A) an epoxy resin, (B) aparticular epoxy compound, (C) a phenolic curing agent, and (D) a curingaccelerator.

[Component (A)]

In the resin composition of the present invention, the component (A) isan epoxy resin. Illustrative examples of the epoxy resin include abisphenol A type epoxy resin, a bisphenol F type epoxy resin, abisphenol AD type epoxy resin, a phenol novolak type epoxy resin, abiphenyl type epoxy resin, a naphthalene type epoxy resin, an alicyclicepoxy resin, a glycidyl ester type epoxy resin, a glycidyl amine typeepoxy resin, a heterocyclic epoxy resin, a diaryl sulfone type epoxyresin, and a silicone-modified epoxy resin, but are not limited thereto.

As the silicone-modified epoxy resin, the ones shown by the followingformula (3) having a weight-average molecular weight of 3,000 to 500,000is particularly preferable. In this case, the composition containing thesilicone-modified epoxy resin gives a cured material with more improvedchemical resistance, heat resistance, and pressure resistance.

In the formula (3), R¹ to R⁶ each independently represent a monovalenthydrocarbon group or an alkoxy group having 1 to 20 carbon atoms, andmay be the same or different. The monovalent hydrocarbon group is notparticularly limited, and is exemplified by a linear, branched, orcyclic alkyl group, an alkenyl group, and an alkynyl group. Each of R¹to R⁶ is preferably a monovalent hydrocarbon group or an alkoxy grouphaving 1 to 12 carbon atoms, more preferably a monovalent hydrocarbongroup or an alkoxy group having 1 to 10 carbon atoms, and particularlypreferably a monovalent hydrocarbon group or an alkoxy group having 1 to6 carbon atoms. Specifically, each of R¹ to R⁶ is preferably a methylgroup, an ethyl group, a propyl group, a hexyl group, a cyclohexylgroup, phenyl group, etc. Among then, a methyl group and a phenyl groupare preferable since the raw materials are easily available.

In the formula (3), “a”, “b”, “c”, “d”, and “e” represent a compositionratio of each repeating unit, and are positive numbers satisfying 0<a<1,0≤b<1, 0≤c<1, 0<d<1, 0≤e<1, 0.67≤(b+d)/(a+c+e)≤1.67, and a+b+c+d+e=1. Inthe formula (3), “g” is an integer of 0 to 300.

In the formula (3), X represents a divalent organic group shown by thefollowing formula (4).

In the formula, E represents a single bond or a divalent organic groupselected from the following formulae.

In the formula (3), Y represents a divalent group containing a siloxaneskeleton shown by the following formula (5).

In the formula, “v” is an integer of 0 to 300.

In the formula (3), Z represents a divalent organic group shown by thefollowing formula (6).

In the formula, G represents a single bond or a divalent organic groupselected from the following formulae_(∘)

In the formulae (4) and (6), each of R⁷, R⁸, R⁹, and R¹⁰ represents amonovalent hydrocarbon group or an alkoxy group having 1 to 20 carbonatoms, which may be the same or different. Each of R⁷ to R¹⁰ ispreferably an alkyl group or an alkoxy group having 1 to 4 carbon atoms,more preferably 1 to 2 carbon atoms. Specifically, a methyl group, anethyl group, a propyl group, a tert-butyl group, a methoxy group, anethoxy group, etc. are preferable.

In the formulae (4) and (6), “t”, “u”, “w”, and “x” are eachindependently an integer of 0 to 2, but are preferably 0.

The silicone-modified epoxy resin shown by the formula (3) has aweight-average molecular weight (Mw) of 3,000 to 500,000, but theweight-average molecular weight is preferably 5,000 to 200,000. Thesilicone-modified epoxy resin shown by the formula (3) may be either arandom copolymer or a block copolymer.

The epoxy resin may be a single substance or a combination of two ormore kinds.

The silicone-modified epoxy resin shown by the formula (3) can beproduced by the method that will be described below by using asilphenylene compound shown by the following formula (7) and a compoundselected from the compounds shown by the following formulae (8) to (11).

In the formulae, R¹ to R¹⁰, E, G, “g”, “t”, “u”, “v”, “w”, and “x” havethe same meanings as described above.

The silicone-modified epoxy resin shown by the formula (3) can besynthesized by hydrosilylation of reactants. In this case, it ispossible to feed all the reactants into a reaction vessel to perform thereaction; to allow a part of the reactants to react, followed by thereaction of the remained reactants; or to allow the reactants to reactone by one; and to select any order of the reactions arbitrary. Eachcompounds are preferably blended in such an amount that the total molaramount of the hydrosilyl groups of the compounds shown by the formula(7) and the formula (8) to the total molar amount of the alkenyl groupsof the compounds shown by the formula (9), the formula (10), and theformula (11) is 0.67 to 1.67, particularly 0.83 to 1.25.

This polymerization reaction is performed in the presence of a catalyst.Any catalysts which are known to promote hydrosilylation may be used.Specifically, palladium complexes, rhodium complexes, and platinumcomplexes may be used, although the catalyst is not limited thereto. Thecatalyst is preferably added in an amount of about 0.01 to 10.0 mol %relative to Si—H bond. When the concentration is 0.01 mol % or more, thereaction proceeds sufficiently without being retarded. When theconcentration is 10.0 mol % or less, the dehydrogenation reaction isdifficult to proceed to eliminate the risk of retarding the additionreaction.

The polymerization reaction may be performed in a solvent selected fromorganic solvents that do not interfere with hydrosilylation. Suitablesolvents include octane, toluene, tetrahydrofuran, and dioxane, but arenot limited thereto. The solvent is preferably used in such an amount asto give a solute concentration of 10 to 70 mass %. When the soluteconcentration is 10 mass % or more, the reaction system is not too thin,and the reaction proceeds without being retarded. When the soluteconcentration is 70 mass % or less, the reaction system is not tooviscous, preventing the risk of failing to stir the reaction systemsufficiently in the middle of the reaction.

The reaction is performed typically at a temperature of 40 to 150° C.,preferably 60 to 120° C., particularly 70 to 100° C. When the reactiontemperature is 150° C. or less, side reactions such as decomposition arehard to occur. When the reaction temperature is 40° C. or more, thereaction proceeds without being retarded. The reaction time is typically0.5 to 60 hours, preferably 3 to 24 hours, and particularly 5 to 12hours.

[Component (B)]

The component (B) is an epoxy compound shown by the following generalformulae (1) and/or (2).

In the formulae, A represents a single bond or a divalent organic groupselected from the following formulae.

Specifically, the epoxy compounds may be shown by the followingstructures.

As “A” described above, the following ones are particularly preferableamong divalent organic groups.

The use of these groups allows the composition to give a cured materialwith more favorable properties.

Due to π-π interaction of the allyl groups contained in these epoxycompounds (B), the composition is improved in strength. These epoxycompounds also act to fill the gap between the crosslinks, andaccordingly, the cured material is improved in homogeneity to increasethe toughness. This makes the composition, when it is used as anencapsulant, be prevented from causing cracks due to warpage of asubstrate and peeling. Accordingly, the present invention is usable fora wafer level packaging favorably.

The component (B) can be synthesized by the following method.

To 1 mole of the compound shown by the general formula (12), four timesof methanol in a molar amount and four times of allyl chloride in amolar amount are added to the system and dissolved, and nine times ormore of sodium hydroxide in a molar amount is added to the system,followed by heating to form an allyl ether compound. Toluene is addedthereto, and this is washed with pure water to remove the alkalinecomponents, followed by removing the solvent in the organic layer underreduced pressure to give a crude product. This is heated at 170 to 260°C. for about 2 to 15 hours to cause rearrangement, thereby giving adiallylphenol compound (13).

To 1 mole of the compound shown by the general formula (13), four timesof methanol in a molar amount and four times of allyl chloride in amolar amount are added to the system and dissolved, and nine times ormore of sodium hydroxide in a molar amount is added to the system,followed by heating to form an allyl ether compound. Toluene is addedthereto, and this is washed with pure water to remove the alkalinecomponents, followed by removing the solvent in the organic layer underreduced pressure to give a crude product. This is heated at 170 to 260°C. for about 2 to 15 hours to cause Claisen rearrangement, therebygiving a tetraallylphenol compound (14).

To this, four times of methanol in a molar amount, four times ofepichlorohydrin in a molar amount, and nine times or more of sodiumhydroxide in a molar amount are added, and this is allowed to react at50 to 150° C. for about 2 to 24 hours. Subsequently, toluene is addedthereto, and this is washed with pure water to remove the alkalinecomponents, followed by removing the solvent in the organic layer underreduced pressure, thereby giving an epoxy compound (2)

The content of (B) the epoxy compound is preferably 0.5 to 100 parts bymass, more preferably 3 to 50 parts by mass based on 100 parts by massof the component (A). This content is preferable since it enables thestrength and the adhesion to be improved sufficiently when the contentof the component (B) is 0.5 parts by mass or more; and the chemicalresistance, modulus of elasticity, and coefficient of linear expansionare not largely affected when the content is 100 parts by mass or less.

[Component (C)]

As a phenolic curing agent of the component (C), any known ones arewidely usable. It is preferable, however, to use a phenolic curing agentthat is solid at ordinary temperature having 2 to 6 phenolic hydroxygroups in the skeleton. Among them, the following structures can beexemplified.

In the formulae, Ar represents a phenol group selected from thefollowing formulae.

Each “y” is an integer of 1 to 2 independently, and each “z” is aninteger of 0 to 2 independently.

Illustrative examples thereof include the following, but are not limitedthereto.

The component (C) is preferably blended such that the equivalent amountof phenolic hydroxy group in the component (C) is 70 mol % to 140 mol %,more preferably 90 mol % to 110 mol % based on the equivalent amount ofthe epoxy groups in the composition. In this range, the curing reactionproceeds favorably. In the above range, the epoxy groups or the phenolicgroups are not to be remained excessively, and the composition scarcelylowers the reliability thereby.

[Component (D)]

As the curing accelerator of the component (D), any accelerator isusable as long as it is used for ring opening of an epoxy group.Illustrative examples of the curing accelerator include imidazoles suchas imidazole, 2-methylimidazole, 2-ethylimidazole, 2-undecylimidazole,2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole,2-phenylimidazole, 2-phenyl-4-methylimidazole,1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole,1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole,1-cyanoethyl-2-phenylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole,and 2-phenyl-4-methyl-5-hydroxymethylimidazole; tertiary amines such as2-(dimethylaminomethyl)phenol, triethylenediamine, triethanolamine,1,8-diazabicyclo[5.4.0]undec-7-ene, and tris(dimethylaminomethyl)phenol;organic phosphines such as diphenyl phosphine, triphenyl phosphine, andtributyl phosphine; metal compounds such as tin octylate;tetrasubstituted phosphonium tetrasubstituted borate such astetraphenylphosphonium tetraphenylborate and tetraphenylphosphoniumethyltriphenylborate.

The content of the component (D) is preferably 0.05 to 20.0 parts bymass, more preferably 0.5 to 3.0 parts by mass based on 100 parts bymass of the component (A). In this range, the curing reaction proceedsin the proper quantity. When the amount is 0.05 parts by mass or more,the reaction tends to proceed sufficiently. When the amount is 20.0parts by mass or less, the cured material is prevented from beingbrittle.

[Component (E)]

The inventive resin composition may contain an inorganic filler as thecomponent (E) to give wafer protection properties, and to improve theheat resistance, the humidity resistance, the strength, etc. in order toenhance the reliability. The filler may include, for example, a silicatesuch as talc, calcined clay, uncalcined clay, mica, and glass; oxidesuch as titanium oxide, alumina, fused silica (fused spherical silica,fused pulverized silica), and powder of crystalline silica; carbonatesuch as calcium carbonate, magnesium carbonate, and hydrotalcite;hydroxide such as aluminum hydroxide, magnesium hydroxide, and calciumhydroxide; sulfate or sulfite such as barium sulfate, calcium sulfate,and calcium sulfite; borate such as zinc borate, barium metaborate,aluminum borate, calcium borate, and sodium borate; and nitride such asaluminum nitride, boron nitride, and silicon nitride. These inorganicfillers may be used alone, or in combination of two or more kinds. Amongthem, silica powder including fused silica and crystalline silica arepreferable. Illustrative examples of the silica powder includereinforcing silica such as fumed silica and precipitated silica, andcrystalline silica such as quartz; specifically, Aerosil (trade mark)R972, R974, and R976 product of NIPPON AEROSIL CO., LTD.; SE-2050,SC-2050, SE-1050, SO-E1, SO-C1, SO-E2, SO-C2, SO-E3, SO-C3, SO-E5, andSO-C5 product of Admatechs Company Limited; Musil 120A and Musil 130Aproduct of Shin-Etsu Chemical Co., Ltd.

The average particle size of the inorganic filler is not particularlylimited, and is preferably 0.01 to 20 μm, more preferably 0.01 to 10 μm.The inorganic filler having an average particle size of 0.01 μm or moreis preferable since the inorganic filler is hard to aggregate, and thestrength of the cured product is enhanced. The average particle size of20 μm or less is preferable since it enables the resin to improve thefluidity to fill the gap between chips to bring good filling properties.Incidentally, the average particle size can be measured as amass-average value D₅₀ (i.e., a particle size or a median diameter whena cumulative mass is 50%) with a particle size distribution measuringapparatus by a laser diffraction method.

The content of the component (E) is preferably 20 to 96 mass %, morepreferably 50 to 96 mass %, particularly preferably 75 to 94 mass % inthe solid content of the resin composition. The inorganic filler contentof 96 mass % or less brings favorable processing characteristics andimproves the strength, thereby being preferable. When the content is 20mass % or more, sufficient effects can be exhibited. Incidentally, thesolid content means components other than the organic solvent.

[(F) Organic Solvent]

The inventive resin composition may contain an organic solvent as acomponent (F). Illustrative examples of the organic solvent includeN,N-dimethylacetamide, methyl ethyl ketone, N,N-dimethylformamide,cyclohexanone, cyclopentanone, N-methyl-2-pyrrolidone, methanol,ethanol, isopropanol, acetone, propylene glycol monomethyl ether,propylene glycol monomethyl ether acetate, toluene, and xylene; in whichmethyl ethyl ketone, cyclopentanone, propylene glycol monomethyl ether,and propylene glycol monomethyl ether acetate are particularlypreferable; but are not limited thereto. These organic solvent may beused alone, or in combination of two or more kinds. The organic solventis preferably used in such an amount that the concentration of the solidcontent in the resin composition is 60 to 90 mass %.

[Other Components]

The inventive resin composition may contain a flame retardant for thepurpose of enhancing flame retardance. The flame retardant isexemplified by phosphorus-based flame retardants, and confers flameretardance without containing halogen atoms. Examples includephosphazene compounds, phosphoric acid ester compounds, and phosphoricacid ester amide compounds. Phosphazene compounds and phosphoric acidester amide compounds each contain a phosphorus atom and a nitrogen atomin the molecule, thereby bringing a particularly high flame retardance.The flame retardant content is preferably 5 to 30 parts by mass based on100 parts by mass of the component (A).

The inventive resin composition may contain a silane coupling agent.Containing a silane coupling agent, the resin composition is allowed tofurther improve the close adhesiveness to an adherend. The silanecoupling agent is exemplified by epoxy silane coupling agents andaromatic group-containing aminosilane coupling agents. These may be usedalone, or in combination of two or more kinds. The content of silanecoupling agent, although not particularly limited, is preferably 0.01 to5 mass % in the inventive resin composition.

The inventive resin composition may also contain components other thanthose described above. For example, various additives may beappropriately added to increase the compatibility of the component (A)with the component (B), or to improve various properties such as thestorage stability or workability of the resin composition. Illustrativeexamples of the components that may be added thereto include internalrelease agents such as fatty acid esters, glyceric acid esters, zincstearate, and calcium stearate; and phenol, phosphorus or sulfur-basedantioxidants. It is also possible to use pigments such as carbon tocolor the composition.

The other components may be added to the inventive resin compositionwithout using a solvent, but may be added after being dissolved ordispersed to an organic solvent to prepare a solution or dispersion.

The resin composition preferably exhibits a tensile strength of 6.0 MPaor more, particularly in a range of 8.0 to 20.0 MPa after being cured.The composition like this gives favorable crack resistance.

The inventive composition is capable of molding a wafer (wafer molding)collectively, and has favorable molding properties particularly to alarge diameter wafer and a thin wafer. The inventive composition alsoexhibits improved strength and has improved adhesion properties toprevent peeling from a substrate, thereby making it possible to performmolding process favorably, and accordingly, the inventive composition isusable for wafer level packaging suitably.

[Resin Film]

The inventive resin film is a film formed from the inventive resincomposition. That is, the inventive resin film is obtained by processingthe resin composition described above into a film-form. Being formedinto a film-form, the composition acquires good molding properties to alarge diameter wafer and a thin wafer, does not cause a problem of shortshot on a wafer surface since casting of a resin is unnecessary tocollective molding of a wafer. The resin film formed from the resincomposition has improved strength and adhesion, and can be a wafer moldmaterial in which various errors hardly occur.

The inventive resin film after curing preferably has a tensile strengthof 6.0 MPa or more, particularly in a range of 8.0 to 20.0 MPa. When thetensile strength is 6.0 MPa or more, it is possible to prevent a crackdue to thermal expansion and shrinkage of a substrate or a chip andforce applied in mounting a semiconductor package.

The inventive resin film after being cured is preferably set to haveelastic modulus of about 150 to 1,500 MPa in a filler-less film, andabout 1,000 to 20,000 MPa in a film loaded with filler. When the elasticmodulus increases, the package becomes hard to deform, and theprotection properties are improved.

Additionally, the use of the inventive resin film allows the curedmaterial to have an elongation of about 2.0 to 3.5%, which has beenabout 1.5 to 2.5% ordinarily in conventional resin films. Due to thelarge elongation, the package hardly causes peeling from a substrateeven in the warping.

In the present invention, a protective film may be laminated on theresin film obtained from the resin composition described above. Thefollowing describes an example of the method for producing the inventiveresin film in this case.

A resin composition solution is produced by mixing the components (A) to(D), together with the components (E) and (F) and the other componentsin case of needs. The resin composition solution is applied onto aprotective film to have a desired thickness using a reverse roll coater,comma coater or the like. The protective film onto which the resincomposition solution has been coated is passed through an in-line dryerand dried by removing the organic solvent at 40 to 180° C. for 2 to 30minutes, and then pressure-bonded and laminated with another protectivefilm using a roll laminator, thereby giving a laminate film in which theresin film is laminated. This laminate film is used as a wafer moldmaterial to bring favorable molding properties.

In case of forming the inventive resin composition into a film-form, thethickness is not particularly limited, but is preferably 2 mm or less,more preferably 50 μm or more and 1,200 μm or less, further preferably80 to 850 μm. Such a thickness is preferable since it makes the filmexcellent in protection properties as a semiconductor encapsulant.

The protective film is not particularly limited, provided it can bepeeled without damaging the shape of the resin film composed of theinventive resin composition, and functions as a protective film andrelease film for wafers. Typical examples include plastic films such aspolyethylene (PE) films, polypropylene (PP) films, polymethylpentene(TPX) films, and polyester films processed to have releasability. Theprotective film preferably has a peel strength of 50 to 300 mN/min, andthe thickness is preferably 25 to 150 μm, more preferably 38 to 125 μm.

[Semiconductor Laminate and Method for Manufacturing the Same]

The inventive semiconductor laminate has a cured material of theinventive resin film on a semiconductor wafer. The inventive method formanufacturing a semiconductor laminate is a method involving a step ofbonding the resin film described above on a semiconductor wafer to moldthe semiconductor wafer, and a step of heat curing of the resin film.

The semiconductor wafer may be a wafer having semiconductor devices(chips) stacked on the surface or a semiconductor wafer havingsemiconductor devices built on the surface. The inventive resin filmexhibits good filling properties on such a wafer surface before molding,together with improved strength and adhesion properties after molding,and is also excellent in protection properties of such wafers.Additionally, the inventive resin film is suitably usable for moldinglarge-diameter wafers having a diameter of 8 inches or more, such as8-inch (200 mm), 12-inch (300 mm), or even larger diameter wafers;thin-film wafers; and square substrates. The thin wafer is preferably awafer processed to a thin-film with a thickness of 5 to 400 μm. Thesquare substrate is ordinarily made from a plastic that contains glassfibers, and preferably has a thickness of 50 to 1,200 μm. Particularly,the present invention is preferably applied to a substrate in a shape ofa tetragon with the long side of 20 cm or more and 850 cm or less andthe thickness of 20 μm or more and 1800 μm or less.

The method for molding a wafer using the inventive resin film is notparticularly limited. For example, molding may be performed such thatone of protective layers attached to both sides of the resin film ispeeled; the resin film having the other protective layer remainedthereon, is collectively adhered to a wafer using a vacuum laminatormanufactured by Takatori Corporation (trade name: TEAM-300) with thevacuum chamber being set to have a degree of vacuum of 50 to 1,000 Pa,preferably 50 to 500 Pa (e.g., 100 Pa), and a temperature of 80 to 200°C., preferably 80 to 130° C. (e.g., 100° C.); after the pressure isreturned to normal pressure, the wafer is cooled to room temperature andis taken out of the vacuum laminator, followed by peeling off the otherprotective layer.

Alternatively, for a wafer on which semiconductor chips have beenstacked, preferred use can be made of a compression molding machine oran apparatus equipped with a vacuum diaphragm laminator and a metalplate press for planarization. For example, the apparatus manufacturedby Apic Yamada Corporation (trade name: MZ-824-01) may be used as thecompression molding machine. A 300 mm silicon wafer having semiconductorchips stacked thereon can be molded at 100 to 180° C., a moldingpressure of 100 to 300 kN, a clamping time of 30 to 90 seconds, and amolding time of 5 to 20 minutes.

The apparatus manufactured by Nichigo-Morton Co., Ltd. (trade name:CVP-300) may be used as the apparatus equipped with a vacuum diaphragmlaminator and a metal plate press for planarization. Subsequent tolamination under the conditions of a lamination temperature of 100 to180° C., a degree of vacuum of 50 to 500 Pa, a pressure of 0.1 to 0.9MPa, and a lamination time of 30 to 300 seconds; the resin moldedsurface may be planarized between the upper and lower hot plate with atemperature of 100 to 180° C., under the conditions of a pressure of 0.1to 3.0 MPa, and a pressing time of 30 to 300 seconds.

After the molding, the resin film can be cured by heating the resin filmat 120 to 220° C. for 15 to 360 minutes. In this way, the semiconductorlaminate can be obtained.

[Semiconductor Device and Method for Manufacturing the Same]

The inventive semiconductor device is formed by dicing the inventivesemiconductor laminate into each piece. The inventive method formanufacturing a semiconductor device involves a step of dicing thesemiconductor laminate manufactured by the inventive method formanufacturing a semiconductor laminate into each piece. By dicing asemiconductor wafer molded with the resin film into each piece asdescribed above, a semiconductor device having a heat cured film isobtained. The molded wafer is attached onto a protective tape forsemiconductor processing such as dicing tape so as to be in contact witha molded resin surface or a wafer surface, and placed on a vacuum chucktable of a dicer. This molded wafer is cut by using a dicing saw (e.g.,DFD6361, product of DISCO Corp.) provided with a dicing blade. Thespindle rotation rate and cutting speed of dicing operation may beselected appropriately, and the spindle rotation rate is generally25,000 to 45,000 rpm, and the cutting speed is generally 10 to 50mm/sec. The size of a division piece is generally about 2 mm×2 mm to 30mm×30 mm, although it depends on a semiconductor package design.

In the semiconductor wafer molded with the resin film, the resin filmhas improved strength and adhesion, thereby making the semiconductorwafer be protected sufficiently. Accordingly, high quality semiconductordevices can be manufactured in good yield by dicing this molded waferinto each pieces.

EXAMPLES

Hereinafter, the present invention will be specifically described byshowing synthesis Examples, Examples, and Comparative Examples, but thepresent invention is not limited to the following Examples.

The following Compounds S-1 to S-9 were used.

[Synthesis Example of Epoxy Compound (1)]

Into a 5 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 617 g (2.0 mol) of CompoundS-1, 256 g (8.0 mol) of methanol, and 852 g (8.0 mol) of epichlorohydrinwere introduced. Then, 768 g (19.2 mol) of sodium hydroxide was addedover 2 hours, followed by increasing the temperature to 60° C., and themixture was allowed to react for 3 hours. After the reaction, 500 mL oftoluene was added thereto, and the organic layer was washed with purewater until the water layer became neutral. Subsequently, the solvent inthe organic layer was removed under reduced pressure to give 757 g (1.8mol) of Epoxy compound (1).

[Synthesis Example of Epoxy Compound (2)]

Into a 5 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 617 g (2.0 mol) of CompoundS-1, 256 g (8.0 mol) of methanol, and 724 g (8.0 mol) of allyl chloridewere introduced. Then, 768 g (19.2 mol) of sodium hydroxide was addedover 2 hours with the shape remaining granular. After the completion ofaddition, the mixture was warmed to 60° C. and allowed to age for 3hours. Subsequently, 500 mL of toluene was added to the reactionsolution, and the organic layer was washed with pure water until thewater layer became neutral. Then, the solvent in the organic layer wasremoved under reduced pressure to give 740 g of a crude product. Thiswas transferred to a 5 L flask equipped with a stirrer, a thermometer, anitrogen inflow instrument, and a reflux condenser again, and stirred at180° C. for 4 hours to cause Claisen rearrangement. Subsequently, thetemperature was decreased to 45° C., 245 g (7.6 mol) of methanol and 810g (7.6 mol) of epichlorohydrin were introduced again. Then, 365 g (9.1mol) of sodium hydroxide was added over 1 hour, followed by increasingthe temperature to 60° C., and the mixture was allowed to react for 3hours. After the reaction, 500 mL of toluene was added thereto, and theorganic layer was washed with pure water until the water layer becameneutral. Subsequently, the organic solvent in the organic layer wasremoved under reduced pressure to give 851 g (1.7 mol) of Epoxy compound(2).

[Synthesis Example of Epoxy Compound (3)]

Into a 5 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 580 g (2.0 mol) of CompoundS-9, 256 g (8.0 mol) of methanol, and 724 g (8.0 mol) of allyl chloridewere introduced. Then, 768 g (19.2 mol) of sodium hydroxide was addedover 2 hours with the shape remaining granular. After the completion ofaddition, the mixture was warmed to 60° C. and allowed to age for 3hours. Subsequently, 500 mL of toluene was added to the reactionsolution, and the organic layer was washed with pure water until thealkaline in the system was removed. Then, the solvent in the organiclayer was removed under reduced pressure to give 720 g of a crudeproduct. This was transferred to a 5 L flask equipped with a stirrer, athermometer, a nitrogen inflow instrument, and a reflux condenser, andstirred at 180° C. for 4 hours to cause Claisen rearrangement.Subsequently, the temperature of the system was decreased to 45° C., 249g (7.8 mol) of methanol and 830 g (7.8 mol) of epichlorohydrin wereintroduced again. Then, 375 g (9.3 mol) of sodium hydroxide was addedover 1 hour, followed by increasing the temperature to 60° C., and themixture was allowed to react for 3 hours. After the reaction, theorganic layer was washed with pure water until the water layer becameneutral. Subsequently, the organic solvent in the organic layer wasremoved under reduced pressure to give 868 g (1.8 mol) of Epoxy compound(3).

[1] Synthesis of Resins

In the Synthesis Examples, the weight average molecular weight (Mw) wasmeasured by gel permeation chromatography (GPC) in terms ofmonodispersed polystyrene as a standard by using a GPC column of TSK gelSuper HZM-H (product of Tosoh Corporation) under analysis conditions ofa flow rate of 0.6 ml/min, an eluting solvent of tetrahydrofuran, and acolumn temperature of 40° C.

[Synthesis Example of Resin 1]

Into a 3 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 195.9 g (0.333 mol) ofCompound S-2 was introduced. Then, 1,400 g of toluene was added thereto,and the mixture was heated to 70° C. Subsequently, 1.0 g of solution ofchloroplatinic acid in toluene (platinum concentration of 0.5 mass %)was introduced, and 414.9 g (0.267 mol) of Compound S-3 and 13.0 g(0.067 mol) of Compound S-4 were each added dropwise over 1 hour (totalmolar number of the hydrosilyl groups/total molar number of the alkenylgroups=0.500/0.500=1/1). After completion of the dropwise addition, themixture was heated to 100° C. and aged for 6 hours. Then, toluene wasevaporated from the reaction solution under reduced pressure to give 570g of Resin 1 having a structure shown by the following formula. The Mwof Resin 1 was 37,400. Incidentally, the siloxane amount contained inResin 1 was 67 mass %.

[Synthesis Example of Resin 2]

Into a 3 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 133.5 g (0.227 mol) ofCompound S-2 was introduced. Then, 1,500 g of toluene was added thereto,and the mixture was heated to 70° C. Subsequently, 1.0 g of solution ofchloroplatinic acid in toluene (platinum concentration of 0.5 mass %)was introduced, and 525.6 g (0.182 mol) of Compound S-5 and 8.8 g (0.045mol) of Compound S-4 were each added dropwise over 1 hour (total molarnumber of the hydrosilyl groups/total molar number of the alkenylgroups=0.500/0.500=1). After completion of the dropwise addition, themixture was heated to 100° C. and aged for 6 hours. Then, toluene wasevaporated from the reaction solution under reduced pressure to give 605g of Resin 2 having a structure shown by the following formula. The Mwof Resin 2 was 51,100. Incidentally, the siloxane amount contained inResin 2 was 79 mass %.

[Synthesis Example of Resin 3]

Into a 3 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 104.9 g (0.179 mol) ofCompound S-2, 61.5 g (0.143 mol) of Compound S-6, and 6.6 g (0.036 mol)of Compound S-7 were introduced. Then, 1,600 g of toluene was addedthereto, and the mixture was heated to 70° C. Subsequently, 1.0 g ofsolution of chloroplatinic acid in toluene (platinum concentration of0.5 mass %) was introduced, and 516.3 g (0.179 mol) of Compound S-5 and34.7 g (0.179 mol) of Compound S-4 were each added dropwise over 1 hour.After completion of the dropwise addition, the mixture was heated to100° C. and aged for 6 hours. Then, toluene was evaporated from thereaction solution under reduced pressure to give 680 g of Resin 3. TheMw of Resin 3 was 46,800. Incidentally, the siloxane amount contained inResin 3 was 72 mass %.

[Synthesis Example of Resin 4]

Into a 3 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 140.2 g (0.333 mol) ofCompound S-8 was introduced. Then, 1,500 g of toluene was added thereto,and the mixture was heated to 70° C. Subsequently, 1.0 g of solution ofchloroplatinic acid in toluene (platinum concentration of 0.5 mass %)was introduced, and 518.7 g (0.333 mol) of Compound S-3 was addeddropwise over 1 hour. After completion of the dropwise addition, themixture was heated to 100° C. and aged for 6 hours. Then, toluene wasevaporated from the reaction solution under reduced pressure to give 610g of Resin 4. The Mw of Resin 4 was 49,500. Incidentally, the siloxaneamount contained in Resin 4 was 79 mass %.

[Synthesis Example of Resin 5]

Into a 3 L flask equipped with a stirrer, a thermometer, a nitrogeninflow instrument, and a reflux condenser, 420.5 g (1.000 mol) ofCompound S-8 was introduced. Then, 1,400 g of toluene was added thereto,and the mixture was heated to 70° C. Subsequently, 1.0 g of solution ofchloroplatinic acid in toluene (platinum concentration of 0.5 mass %)was introduced, and 194.4 g (1.000 mol) of Compound S-4 was addeddropwise over 1 hour (total molar number of the hydrosilyl groups/totalmolar number of the alkenyl groups=1.000/1.000=1.00). After completionof the dropwise addition, the mixture was heated to 100° C. and aged for6 hours. Then, toluene was evaporated from the reaction solution underreduced pressure to give 570 g of Resin 5. The Mw of Resin 5 was 53,200.Incidentally, siloxane was not contained in Resin 5.

[2] Production of Resin Films Examples 1 to 24 and Comparative Examples1 to 6

In accordance with the compositions described in the following Tables 1and 2, (A) the epoxy resin synthesized in Synthesis Example 5 (Resin 5)or the silicone-modified epoxy resin synthesized in Synthesis Examples 1to 4 (Resins 1 to 4), (B) Epoxy compounds (1) to (4), (C) a phenoliccuring agent, (D) a curing accelerator, and (E) an inorganic filler wereformulated. Additionally, cyclopentanone was added in an amount to makethe solid content 65 mass %, and these were mixed and dispersed bystirring with a stirrer or a homomixer to prepare each dispersion ofresin composition. The phenolic curing agent (C) was added in the samemolar amount with the epoxy groups contained in the component (A) andthe component (B).

Each resin composition was applied onto a protective film, with theresin shape being 250 mm square, using a die coater as a film coater andE7304 (trade name, polyester manufactured by Toyobo Co., Ltd.,thickness: 75 μm, peel strength: 200 mN/50 mm) as a protective film.Then, this was kept in an oven set to 100° C. for 30 minutes toevaporate the solvent completely, thereby forming a resin film with afilm thickness of 100 μm on the protective film.

The following shows each component used for preparing the resincomposition other than those described above.

[Epoxy Compound]

[Phenolic Curing Agents]

[Curing Accelerator]

-   -   Curezol 2P4MHZ (trade name) (product of Shikoku Chemical        Corporation, 2-phenyl-4-methyl-5-hydroxymethylimidazole)

[Inorganic Filler]

-   -   Silica (product of Admatechs Co., Ltd., average particle size:        5.0 μm)

[3] Evaluation of Resin Films

The obtained resin films were evaluated by the following methods. Theresults are shown in Tables 1 and 2.

<Method for Measuring Tensile Strength>

The tensile modulus of elasticity, strength, and elongation weremeasured on each cured film produced as above using a tensile strengthmeasuring apparatus (autograph AGS-5kNG manufactured by ShimadzuCorporation). The conditions for curing the resin film was 180° C. for 4hours.

<Method for Testing Adhesion>

Each produced film was stuck on a 20 mm square silicon wafer, and asilicon chip cut into 2 mm square was put thereonto, followed by heatcuring (180° C. for 4 hours). Subsequently, the adhesion strength wasmeasured when the chip was repelled from the side using an adhesionstrength measuring apparatus (universal bondtester series 4000 (DS-100)manufactured by Nordson Advanced Technology K.K.) (die shear test).

<Flexibility Test>

Each produced film was wound around a plastic cylinder with an outerdiameter of 8.5 cm and stood for 10 seconds. Subsequently, the film wasreturned to the original state, followed by determining fault on thefilm. The film was evaluated as “bad” when breakage and so on occurred,and was evaluated as “good” when there was no change.

TABLE 1 Comparative Examples Examples Run 1 2 3 4 5 6 7 8 9 10 11 12 1 2A Resin 1 100 100 Resin 2 100 100 100 100 100 100 100 100 Resin 3 100Resin 4 100 Resin 5 100 100 B Epoxy compound (1) 10.0 10.0 10.0 10.010.0 25.0 40.0 5.0 5.0 5.0 Epoxy compound (2) 10.0 5.0 5.0 5.0 Epoxycompound (3) 10.0 Epoxy compound (4) 10.0 10.0 C Phenol compound (1)21.9 16.4 8.1 21.0 52.8 26.5 36.5 15.3 15.5 21.9 21.0 52.8 Phenolcompound (2) 10.8 Phenol compound (3) 6.6 D 2P4MHZ 1 1 1 1 1 1 1 1 1 1 11 1 1 E silica F cyclopentanone 33 32 30 33 41 38 44 32 32 33 30 29 3341 silica content [mass %] 0% 0% 0% 0% 0% 0% 0% 0% 0% 0% 0% 0% 0% 0%Tensile modulus [MPa] 450 400 260 380 540 460 510 440 340 440 390 370220 520 Tensile strength [MPa] 9.0 8.8 9.0 7.6 9.2 7.0 6.6 9.2 8.2 9.38.8 8.9 4.2 4.8 Elongation [%] 2.5 2.8 3.0 2.9 1.2 2.2 1.7 3.0 2.6 2.62.2 2.9 2.4 1.6 Adhesion strength [MPa] 15 13 11 11 18 14 14 13 13 15 1217 7 9 Flexibility test good good good good good good good good goodgood good good bad bad

TABLE 2 Comparative Examples Examples Run 13 14 15 16 17 18 19 20 21 2223 24 3 4 5 6 A Resin 1 100 100 Resin 2 100 100 100 100 100 100 100 100100 Resin 3 100 100 Resin 4 100 Resin 5 100 100 B Epoxy compound (1)10.0 10.0 10.0 10.0 10.0 25.0 40.0 5.0 5.0 5.0 Epoxy compound (2) 10.05.0 5.0 5.0 Epoxy compound (3) 10.0 Epoxy compound (4) 10.0 10.0 10.010.0 C Phenol compound (1) 21.9 16.4 8.1 21.0 52.8 26.5 36.5 15.3 15.515.1 9.6 1.4 46.0 0.0 Phenol compound (2) 30.3 Phenol compound (3) 12.2D 2P4MHZ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 E silica 967 927 866 961 11941111 1295 919 920 918 1029 896 877 817 1144 807 F cyclopentanone 275 263246 273 339 316 368 261 262 261 293 255 249 232 325 229 silica content[mass %] 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88% 88%Tensile modulus [MPa] 4900 4500 4000 4400 5500 4800 5400 5000 4200 49004400 4400 3300 3100 2600 3800 Tensile strength [MPa] 16.2 15.6 16.8 15.416.5 13.8 12.8 18.5 14.0 17.8 17.7 18.0 9.9 8.5 8.6 7.7 Elongation [%]1.0 1.3 1.4 1.4 0.5 1.1 0.9 1.6 1.1 1.4 1.1 1.6 0.8 0.9 0.7 0.7 Adhesionstrength [MPa] 17 15 15 14 20 15 16 17 14 16 14 17 13 12 11 12Flexibility test good good good good good good good good good good goodgood bad bad bad bad

From the above results, it was confirmed that the resin films obtainedfrom the inventive resin composition exhibited largely increasedstrength, improved adhesion, and increased flexibility on the wholecompared to the resin films of Comparative Examples obtained fromcompositions that did not contain the component (B). From thesefeatures, it is concluded that films for semiconductor encapsulationusing the inventive resin composition hardly causes crack and peeling.

The inventive resin composition, containing an epoxy compound in aparticular structure having allyl groups, makes it possible to largelyimprove the strength and the adhesion of the cured material.Accordingly, the inventive resin composition is capable of exhibitingfavorable crack resistance and resistivity to peeling on a wafer havinga chip mounted thereon when it is used for film-form molding material,for example.

It should be noted that the present invention is not limited to theforegoing embodiments. The embodiments are just exemplification, and anyexamples that have substantially the same feature and demonstrate thesame functions and effects as those in the technical concept describedin claims of the present invention are included in the technical scopeof the present invention.

1. A resin composition comprising: (A) an epoxy resin; (B) an epoxycompound shown by the following formula (1) and/or formula (2); (C) aphenolic curing agent; and (D) a curing accelerator,

wherein “A” represents a single bond or a divalent organic groupselected from the following formulae.


2. The resin composition according to claim 1, wherein the component (A)is a silicone-modified epoxy resin.
 3. The resin composition accordingto claim 2, wherein the silicone-modified epoxy resin is shown by thefollowing formula (3) and has a weight-average molecular weight of 3,000to 500,000,

wherein, R¹ to R⁶ each independently represent a monovalent hydrocarbongroup or an alkoxy group having 1 to 20 carbon atoms, which is the sameor different; “a”, “b”, “c”, “d”, and “e” represent a composition ratioof each repeating unit, and are positive numbers satisfying 0<a<1,0≤b<1, 0≤c<1, 0<d<1, 0≤e<1, 0.67≤(b+d)/(a+c+e)≤1.67, and a+b+c+d+e=1;“g” is an integer of 0 to 300; X represents a divalent organic groupshown by the following formula (4); Y represents a divalent groupcontaining a siloxane skeleton shown by the following formula (5); Zrepresents a divalent organic group shown by the following formula (6),

wherein E represents a single bond or a divalent organic group selectedfrom the following formulae,

R⁷ and R⁸ each represent a monovalent hydrocarbon group or an alkoxygroup having 1 to 20 carbon atoms, which is the same or different, “t”and “u” are each independently an integer of 0 to 2;

wherein “v” is an integer of 0 to 300;

wherein G represents a single bond or a divalent organic group selectedfrom the following formulae,

R⁹ and R¹⁰ each represent a monovalent hydrocarbon group or an alkoxygroup having 1 to 20 carbon atoms, which is the same or different, “w”and “x” are each independently an integer of 0 to
 2. 4. The resincomposition according to claim 1, wherein the resin composition exhibitsa tensile strength of 6.0 MPa or more after being cured.
 5. The resincomposition according to claim 2, wherein the resin composition exhibitsa tensile strength of 6.0 MPa or more after being cured.
 6. The resincomposition according to claim 3, wherein the resin composition exhibitsa tensile strength of 6.0 MPa or more after being cured.
 7. The resincomposition according to claim 1, wherein the component (B) is containedin an amount of 0.5 to 100 parts by mass based on 100 parts by mass ofthe component (A).
 8. The resin composition according to claim 2,wherein the component (B) is contained in an amount of 0.5 to 100 partsby mass based on 100 parts by mass of the component (A).
 9. The resincomposition according to claim 1, further comprising (E) an inorganicfiller.
 10. The resin composition according to claim 9, wherein theinorganic filler is silica and is contained in an amount of 20 to 96mass % in the resin composition.
 11. A resin film composed of the resincomposition according to claim
 1. 12. A resin film composed of the resincomposition according to claim
 2. 13. A resin film composed of the resincomposition according to claim
 3. 14. A resin film composed of the resincomposition according to claim
 4. 15. A resin film composed of the resincomposition according to claim
 7. 16. The resin film according to claim11, wherein the resin film exhibits a tensile strength of 6.0 MPa ormore after being cured.
 17. A semiconductor laminate comprising a curedmaterial of the resin film according to claim 11 on a semiconductorwafer.
 18. A semiconductor device, characterized in that thesemiconductor laminate according to claim 17 is diced into each piece.19. A method for manufacturing a semiconductor laminate, comprising thesteps of: bonding the resin film according to claim 11 on asemiconductor wafer to mold the semiconductor wafer; and heat curing ofthe resin film.
 20. A method for manufacturing a semiconductor device,comprising the step of dicing the semiconductor laminate manufactured bythe method for manufacturing a semiconductor laminate according to claim19 into each piece.